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| Advance Product Information March 21, 2000 27 - 32 GHz 1W Power Amplifier TGA1172 Key Features * 0.25 um pHEMT Technology * 18 dB Gain at 28 GHz * 29 dBm Nominal P1dB * 37dBm OTOI typical at 28GHz * Input/Output RL < -10 dB * Bias 6 - 7V @ 630 mA Chip Dimensions 2.69 mm x 1.37 mm Small Signal Gain 15 10 Return Loss (dB) ) g ( 25 Primary Applications * Point-to-Point Radio * Point-to-Multipoint Communications * Ka Band Sat-Com Vd1 Vg2 Vd2 Vg3 RF OUT Vd3 6V, 630 mA 5 0 -5 -10 -15 -20 10 15 S11 S21 15 5 Gain (dB) -5 -15 -25 S22 20 25 30 35 -35 -45 40 RF IN 600m 1200m 2400m Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 Amplifier Topology Frequency (GHz) Output Power at P1dB 32 30 29 28 27 26 25 26 27 28 29 30 31 32 Frequency (GHz) Output TOI (dBm) Output Third Order Intercept 40 39 38 37 36 35 34 33 32 31 30 26 27 28 29 30 31 P1dB (dBm) 6V, 630 mA ( ) 6V, 630 mA 31 32 33 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information March 21, 2000 TGA1172 TGA1172 Single tone pout and IMD3 vs Pin Frequency = 28GHz, 6V, 630 mA 25 10 20 0 15 -10 10 SCL Power 5 IMD3 -20 -30 0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5 -40 TGA1172 Single tone pout and IMD3 vs Pin Frequency = 31GHz, 6V, 630 mA 25 10 20 0 15 -10 10 SCL Power 5 IMD3 -20 -30 0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5 -40 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com IMD3 (dBm) Pout (dBm) IMD3 (dBm) Pout (dBm) Advance Product Information March 21, 2000 TGA1172 Vd 100pF 0.01F 5mil Ribbon 5mil Ribbon 100pF 0.01F Vg Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information March 21, 2000 TGA1172 Assembly Process Notes Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 |
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